Sensor and micromachined optical device technologies (24-26 May 2011, Beijing China)Wang, Yuelin; Xie, Huikai; Jin, Yufeng et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8191, issn 0277-786X, isbn 978-0-8194-8832-9, 1 vol, isbn 978-0-8194-8832-9Conference Proceedings

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One dimensional photoconductivity in DNAMAGAN, J. D; BLAU, W; CROKE, D. T et al.Chemical physics letters. 1987, Vol 141, Num 6, pp 489-492, issn 0009-2614Article

Low surface recombination velocities on doped silicon and their implications for point contact solar cellsKING, R. R; SINTON, R. A; SWANSON, R. M et al.Photovoltaic specialists conference. 19. 1987, pp 1168-1173Conference Paper

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Fabrication of Ultra-thin Silicon PIN DetectorMIN YU; XIANSHAN DONG; YING LI et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8191, issn 0277-786X, isbn 978-0-8194-8832-9, 819103.1-809103.4Conference Paper

Study of the Bullet Position Measuring Model With Six Light ScreensFENG BIN; SHI, Xiu-Hua; KANG, Zhi-Qiang et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8191, issn 0277-786X, isbn 978-0-8194-8832-9, 819108.1-819108.7Conference Paper

A study of bacteriorhodopsin-containing proteoliposome incorporation into bimolecular lipid membranesMIRSKY, V. M; SOKOLOV, V. S; DYUKOVA, T. V et al.Journal of electroanalytical chemistry and interfacial electrochemistry. 1983, Vol 11, Num 4-6, pp 327-346, issn 0022-0728Article

PHOTOGALVANIC EFFECTS INVESTIGATION IN GALLIUM ARSENIDEALPEROVICH VL; BELINICHER VI; NOVIKOV VN et al.1982; FERROELECTRICS; ISSN 0015-0193; USA; DA. 1982; VOL. 45; NO 1-2; PP. 1-12; BIBL. 29 REF.Article

EFFET PHOTOELECTRIQUE DANS LES MAGNETO-DIODESDAUDERIS VA; STRUOGYUS YU LS.1981; Z. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1981; VOL. 51; NO 7; PP. 1563-1564; BIBL. 1 REF.Article

CARACTERISTIQUES PHOTOELECTRIQUES DES STRUCTURES P-PI -NU -N A BASE DE GAAS(FE)VILISOV AA; GAMAN VI; DIAMANT VM et al.1980; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1980; VOL. 14; NO 4; PP. 625-628; BIBL. 8 REF.Article

EFFET PHOTO-ELECTRIQUE DANS LES CELLULES SANDWICHES MULTICOUCHES RENFERMANT DE LA PHTALOCYANINEILATOVSKIJ VA; DMITRIEV IB; KOMISSAROV GG et al.1980; Z. FIZ. HIM.; ISSN 0044-4537; SUN; DA. 1980; VOL. 54; NO 5; PP. 1219-1222; BIBL. 4 REF.Article

MISE EN EVIDENCE D'UNE INSTABILITE DE L'EFFET PHOTOELECTRIQUE DANS DES STRUCTURES MULTIJONCTIONS MATRICIELLES BASEES SUR DU SILICIUMAGAEV YA; BAZAROV BA; ZADDEH VV et al.1978; IZVEST. AKAD. NAUK TURKM. S.S.R., FIZ.-TEKH. KHIM. GEOL. NAUK; SUN; DA. 1978; NO 2; PP. 19-23; ABS. ENG; BIBL. 7 REF.Article

QUELQUES PARTICULARITES DES PROPRIETES PHOTOELECTRIQUES D'UNE HETEROSTRUCTURE SNO₂-INSEBARANYUK VB; MALIK AI; MANASSON VA et al.1979; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1979; VOL. 13; NO 1; PP. 8-12; BIBL. 5 REF.Article

Effect of lateral inhomogeneity of Barrier height on the photoresponse characteristics of Schottky junctionsHORVATH, Z. J; VO VAN TUYEN.SPIE proceedings series. 1998, pp 65-67, isbn 0-8194-2808-6Conference Paper

Measurement of surface recombination velocity and emitter characteristics of solar cells by EBICBELL, R. O; DUBE, C. E.Photovoltaic specialists conference. 19. 1987, pp 795-798Conference Paper

SURFACE PHOTOGALVANIC EFFECT IN METALSMAGARILL LI; EHNTIN MV.1981; ZH. EKSP. TEOR. FIZ.; SUN; DA. 1981-09; VOL. 81; NO 3; PP. 1001-1010; BIBL. 5 REF.Article

PROPRIETES PHOTOELECTRIQUES DES HETEROJONCTIONS ZNP₂(D₄⁸)-ZNP₂(C_2H⁵)RADAUTSAN SI; SYRBU NN; STAMOV IG et al.1977; DOKL. AKAD. NAUK S.S.S.R.; S.S.S.R.; DA. 1977; VOL. 236; NO 1; PP. 72-74; BIBL. 6 REF.Article

THERMALLY STIMULATED CURRENT REVERSALS IN ZNO PHOTOELECTRETS.PILLAI PKC; RABINDERNATH; NAIR PK et al.1976; PHYS. LETTERS, A; NETHERL.; DA. 1976; VOL. 58; NO 7; PP. 474-476; BIBL. 15 REF.Article

Influence of different types of surface treatment on photoelectric and optical properties of CdTe crystalsBAIDULLAEVA, A; MOZOL', P. E; VLASENKO, A. I et al.SPIE proceedings series. 1998, pp 53-55, isbn 0-8194-2808-6Conference Paper

Experimental characterization of minority carrier mirrors for gallium arsenide based solar cellsKLAUSMEIER-BROWN, M. E; KYONO, C. S; RANCOUR, D. P et al.Photovoltaic specialists conference. 19. 1987, pp 1174-1179Conference Paper

Measurement of minority carrier lifetimes and surface recombination velocities in solar cellsWOLF, M; NEWHOUSE, M.Photovoltaic specialists conference. 19. 1987, pp 1156-1161Conference Paper

Cinétique de photoréponse des structures MOS tunnelVUL, A. YA; DIDEJKIN, A. T; ZINCHIK, YU. S et al.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 8, pp 1471-1477, issn 0015-3222Article